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| KSB601 KSB601 Low Frequency Power Amplifier * Medium Speed Switching Industrial Use * Complement to KSD560 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value - 100 - 100 -7 -5 -8 - 0.5 1.5 30 150 - 55 ~ 150 Units V V V A A A W W C C * PW10ms, Duty Cycle50% (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSB601 Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) VCEX(sus)1 Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Test Condition IC = - 3A, IB1 = - 3mA, L = 1mH IC = - 3A, IB1 = - IB2 = - 3mA VBE(off) = 5V, L =180H Clamped IC = - 6A, IB1 = - 12mA IB2 = 3mA, VBE(off) = 5V L = 180uH, Clamped VCB = - 100V, IE = 0 VCE = - 100V, RBE = 51 TC= 125C VCE = - 100V, VBE(off) = 1.5V VCE = - 100V, VBE(off) = 1.5V TC = 125C VEB = - 5V, IC = 0 VCE = - 2V, IC = - 3A VCE = - 2V, IC = - 5A IC = - 3A, IB = - 3mA IC = - 3A, IB = - 3mA VCC = - 50V , IC = - 3A IB1 = - IB2 = - 3mA RL = 17 0.5 1 1 2000 500 Min. 100 100 100 - 10 -1 - 10 -1 -3 15000 - 1.5 -2 V V s s s Typ. Max. Units V V VCEX(sus)2 Collector-Emitter Sustaining Voltage V ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tS tF Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current *DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn ON Time Storage Fall time A mA A mA mA * Pulse Test: PW350s, Duty Cycle2% hFE Classification Classification hFE1 R 2000 ~ 5000 O 3000 ~ 7000 Y 5000 ~ 15000 (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSB601 Typical Characteristics -5 IC[A], COLLECTOR CURRENT -4 IB = -10mA IB = -6mA IB = -4mA IB = m -2 A 10000 VCE = -2V IB .5mA = -1 IB = -1.0mA -3 hFE, DC CURRENT GAIN -5 1000 IB = -0.8mA -2 IB = -0.6mA -1 100 IB = -0.4mA -0 -1 -2 -3 -4 10 -0.01 -0.1 -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VCE(sat)[V],VBE(sat)[V] SATURATION VOLTAGE -10 IC = 1000 IB -10 IC[A], COLLECTOR CURRENT 100ms -1 VBE(sat) 10m s Dis sip Lim atio n ited 100 s 1m us 50u s 30 0u s s/b -1 L im VCE(sat) -0.1 ite d -0.01 -0.1 -0.1 -0.001 -1 -10 -100 -1 -10 -100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area -16 160 -14 140 IC[A], COLLECTOR CURRENT -12 120 -10 dT[%], Ic DERATING 100 -8 80 s/b 60 -6 Di ss Lim ip a ite d -4 40 tio n Li m ite d -2 20 -0 -20 -40 -60 -80 -100 -120 -140 -160 0 25 50 o 75 100 125 150 175 200 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Reverse Bias Safe Operating Areas Figure 6. Derating Curve of Safe Operating Areas (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSB601 Typical Characteristics (Continued) 40 35 PC[W], POWER DISSIPATION 30 25 20 15 10 5 0 25 50 o 75 100 125 150 175 200 TC[ C], CASE TEMPERATURE Figure 7. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSB601 Package Demensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
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